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OTPA1025P 6–18 GHz GaN PA
~20 W wideband power amplifier
Model: OTPA1025P
Overview
6–18 GHz GaN MMIC power amplifier delivering typically 44 dBm saturated output, ~21 dB power gain and ~30% PAE in pulsed mode; ~43 dBm in CW. 50 Ω I/O in a ceramic package.
Highlights
- Frequency 6–18 GHz
- Pulsed Psat typically 44 dBm
- Power gain ~21 dB (pulsed)
- PAE ~30% typ. @ Pin=23 dBm
- 50 Ω I/O, ceramic package
Key Features
- GaN monolithic power amplifier covering 6–18 GHz.
- Pulsed (100 μs, 10% duty, VD=28 V): ~21 dB power gain, 44 dBm Psat, ~30% typical PAE.
- CW at VD=28 V: ~20 dB power gain, ~43 dBm Psat, ~27% typical PAE.
- 50 Ω input/output ports in a ceramic package.
- Typical supply VD 20–28 V, VG ≈ −1.8 V; drain dynamic current ~2.2 A @ Pin=23 dBm.
Specifications
| Frequency | 6–18 GHz |
|---|---|
| Psat (pulsed) | 44 dBm typ. (VD=28 V, 100 μs / 10%) |
| Psat (CW) | 43 dBm typ. (VD=28 V) |
| Power gain | ~21 dB pulsed / ~20 dB CW @ Pin=23 dBm |
| PAE | ~30% pulsed / ~27% CW @ Pin=23 dBm |
| Small-signal gain | ~34 dB typ. |
| Input return loss | ~10 dB |
| Supply | VD 20–28 V; VG ≈ −1.8 V |
| Drain dynamic current | ~2.2 A @ Pin=23 dBm |
| Size | 15.2×15.2×3.5 mm |
| Operating ambient temp. | −40°C to 85°C |
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